Abstract: Edge computing requires highly energy efficient microprocessor units with embedded non-volatile memories to process data at IoT sensor nodes. Ferroelectric non-volatile memory devices are ...
Abstract: For the first time, we integrated poly-Si gate CMOSFETs with nitrogen incorporated HfO/sub 2/-Al/sub 2/O/sub 3/ laminate (HfAlON) as gate dielectrics. Both low gate leakage currents (0.1 ...
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